環型佈植角度對奈米MOSFET數位及類比特性的影響

2021年1月16日 — One such effort is to have the additional dopant atoms laterally at the channel region's drain and/or source sides through the ion implantation ...

9.2 Short Channel Effect Reduction with Pocket Implants · 9.2.1 Threshold Voltage Reduction · 9.2.2 Large Angle Tilt Implant Optimization · 9.2.3 Process ...

由 JW Wu 著作 · 2004 · 被引用 42 次 — Our result shows that pocket implantation will significantly degrade device low-frequency noise primarily because of nonuniform threshold voltage distribution.

由 J Schmitz 著作 · 1997 — The main advantages of pocket implants over a super steep retrograde well are, that they are implanted later in the process flow and thus endure less thermal ...

2007年8月1日 — pocket implant. Pocket implants are used to avoid Punch through effects in short-channel devices. they are heavily doped (unlike LDD) small ...

由 WC Lin 著作 · 2006 — ... pocket implant though choosing appropriate pocket implant angles between small and medium. Thus, the device may not need trade-off at short channel region ...

... (Pocket Implant)來改善元件短通道效應；而在本篇將使用到這兩項製程，摻雜和植入不同濃度的量在UTB SOI元件，來探討不同高低摻雜濃度的LDD與Pocket對元件電性與可靠度 ...

此兩種製程的功用，LDD 主要是防. 止熱載子效應，並提升元件電性；而Pocket 主要目的是抑制汲極引起的位能下降(Drain-Induced. Barrier Lowering,DIBL)造成臨界電壓的變化 ...