deep trench isolation process
由ZKuiying著作·2010·被引用5次—Adeeptrenchisolationprocessprovidesverylowleakagecurrent,low...Accordingtotheoptimizedtrenchprocess,desirableisolationcapabilityofthedeep ...,ThetrenchisolationregionsisolateeachpairofCMOStransistorsandanylinearorhig...
Deep trench isolated CMOS devices
- 淺溝槽隔離
- shallow trench isolation半導體
- 淺溝槽隔離
- 淺溝渠隔離
- usg半導體
- hump effect
- shallow trench isolation中文
- sti淺溝槽
- deep trench isolation process
- locos
- hump effect
- cmos sti
- sti divot formation
- shallow trench isolation wiki
- hump effect
- 淺溝槽隔離
- deep trench isolation
- deep trench isolation
- deep trench isolation process
- locos sti比較
- sti divot formation
- pad oxide半導體
- shallow trench isolation半導體
- ild半導體
- deep trench isolation
由RDRung著作·1982·被引用139次—Adeep(5-6microns)trenchisolationprocesswhichpermitsminimumfeaturesizespacingbetweenn-andp-channeldevicesinbulkCMOSisdescribed.
** 本站引用參考文章部分資訊,基於少量部分引用原則,為了避免造成過多外部連結,保留參考來源資訊而不直接連結,也請見諒 **