Method for Forming Deep Trench Isolation Structure for CMOS ...

由 Z Kuiying 著作 · 2010 · 被引用 5 次 — A deep trench isolation process provides very low leakage current, low ... According to the optimized trench process, desirable isolation capability of the deep ...

The trench isolation regions isolate each pair of CMOS transistors and any linear or high voltage devices formed on the substrate. The deep trenches (e.g., for ...

Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a ...

The process flow for this technology is based on a. Pepi on P++ substrate starting material. A shallow trench isolation is employed for the CMOS logic isolation ...

由 RD Rung 著作 · 1982 · 被引用 139 次 — A deep (5-6 microns) trench isolation process which permits minimum feature size spacing between n- and p-channel devices in bulk CMOS is described.

由 A Tournier 著作 · 被引用 90 次 — Following this process flow, Deep Trench isolation was integrated in a 1.4µm pixel Front-Side. Illumination (FSI) technology. Cross-section inside pixels ...

2023年12月16日 — The method begins by forming a trench in a semiconductor substrate, extending from one side to the other. The trench has an opening on one side, ...

由 M Forsberg 著作 · 2004 · 被引用 4 次 — A shallow and deep trench isolation process module for high performance rf bipolar complementary metal-oxide-semiconductor. (BiCMOS) is presented in detail.

Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between ...