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IncreasingtheetchrateoftheSTIdielectricresultedinatendencytocauseSTIdivotsandincreaseddivotsize....STIdivotformationinaccordancewiththe ...,2013年7月17日—IntheSTItechnique,atrenchsurroundingasemiconductordevicesuchasatransistorisetchedintoasemico...
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Amethodformanufacturingshallowtrenchisolation(STI)structuresinsemiconductordevicemanufacturingincludingamethodforminimizingdivotformation ...
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