shallow trench isolation oxide thickness leakage
由EPerrin著作—ThispaperproposesareviewofthevariousconsequencesoftheShallowTrenchIsolation(STI)oxidethicknessvariationsondifferentprocessstepsand.,由LZhangli著作·2011·被引用5次—Gatelengthdependenceoftheshallowtrenchisolationleakagecurrentinan...ST...
Stress induced defects and transistor leakage for shallow ...
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由JWSleight著作·1999·被引用39次—Fortheshallowtrenchisolationprocessemployed,theleakageismostpronouncedonSIMOXwaferswhentheburiedoxidethicknessisscaleddownto100nm ...
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