hkmg process flow
本发明涉及简化的先栅极HKMG制造流程,当依据先栅极HKMG方法形成场效应晶体管时,在硅化步骤以前必须移除形成于栅极电极的顶部上的覆盖层,从而导致在晶体管的栅极电极 ...,GrapheneaFoundryqualifiesaHKMGprocessflowwithanEOTdownto5nm,anindustryfirst.Following...
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- Gate-last process
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ThetwocommonprocessflowstopatterntheHKMGstackaregate-firstandgate-last.Thegate-firstHKMGprocessisverysensitive,asthecappingmetal ...
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