High

Electrode and Dielectric When the gate is pulsed, current flows between the source and drain. Intel's High-K/Metal Gate technology enabled elements on a chip to ...

由 J Robertson 著作 · 2015 · 被引用 734 次 — We review that progress in this article, with an emphasis on the key developments in the high-K/metal gate stack process. We also summarise recent results ...

由 J Robertson 著作 · 被引用 734 次 — The gate first process follows the standard process flow, but with a metal gate replacing the poly-Si gate. ... high temperatures, the gate last process was ...

Intel made a significant breakthrough in the 45nm process by using a high-k (Hi-k) material called hafnium to replace the transistor's silicon dioxide gate ...

由 L Wu 著作 · 2013 — The chapter first explains the details of devices fabrication process and then describes the analysis technique used in this project, including ...

由 TY Hoffmann 著作 · 被引用 33 次 — Similar to Intel's 45nm process, this approach is based on a high-k first scheme though, so unless significant progress is being made to improve the thermal ...

由 E Erben 著作 · 2018 · 被引用 8 次 — The metal gate for NMOS transistors requires a work function close to the conduction band of Si (∼4.1 eV) and the PMOS transistor needs a metal gate with a ...

High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another ...