由 F Ohtake 著作 · 1999 · 被引用 1 次 — A low-contact resistance poly-metal gate system consisting of TiN/thin TiSi2/poly-Si is described. A poly-metal gate is one of the candidates for the next ...
由 R Cerutti 著作 · 2005 · 被引用 1 次 — In this paper, the authors presented an integration strategy for metal gate GAA transistors made by SON process using poly-gate replacement through contact ...
Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is ...
由 陳人豪 著作 · 2008 — Metal gate might be the only way to solve these problems. ... In this work, we use NiSi gate to replace poly-Silicon gate ... We use Ni-FUSI gate as metal gate.